oPhysical Design Database (DEF): Contains the placed locations of all cells and the layout of the power grid
Parasitic Resistance (RC Extraction or SPEF): Accurate resistance values for all segments of the PDN (metal wires and vias). This usually comes from an RC extraction tool run on the power grid layout (e.g., from Quantus/StarRC). Sometimes derived from LEF/tech files for early estimates.
Library Power Information (.lib**):** Specifies the average leakage power (or current) consumed by each standard cell and macro.
Average Switching Activity: Information about the average toggle rate or switching probability of the cells in the design. This can be:
A global default activity factor (e.g., 10-20% toggle rate) - less accurate.
Statistical averages derived from synthesis or simulation.
Cell-based average power calculated from libraries and potentially state probability information.
Power Source Locations: Coordinates and voltage values of the main power pads/bumps/sources connected to the PDN.
(Optional) Technology Files/each cell current characteristics defined: For EM limits and material properties if EM analysis is run concurrently.