What type of DRCs are related to advanced nodes (e.g., 3nm)?

oMulti-Patterning Rules: Assigning diff masks to shapes based on adjacent mask, if it is odd cycle violation, loop violation.

  • Via Rules:
  • Via Stacking & Alignment: Very tight rules on stacking multiple vias and their alignment to metal layers above and below.
  • Via Enclosure by Metal: Stricter metal enclosure around vias.
  • Interconnect Rules:
  • Minimum Metal Pitch: Extremely tight metal width and spacing rules.
  • End-of-Line (EOL) Spacing: Specific, often larger, spacing required at the ends of metal lines.
  • Complex Conditional Spacing: Spacing rules that change based on parallel run length, adjacent feature types, or layer.
  • fixing-double-patterning-errors-at-20nm
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‹ Which cells and which VT types have high variation between SS and FF corners?
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